2N6036G PNP Darlington power transistor, 80V VCEO, 4A continuous collector current, 40W dissipation, in TO-126 package.
Mfr Part #:

2N6036G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP Darlington power transistor, 80V VCEO, 4A continuous collector current, 40W dissipation, in TO-126 package.
Total Stock: 475 pcs

2N6036G Available from 1 distributor

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2N6036G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Peak
Collector Cutoff Current (Maximum @ Vce = 80 V, Vbe(off) = 1.5 V, Tc = 125 °C)
Collector Cutoff Current (Maximum @ Vce=80 V, Ib=0)
Collector-Emitter Sustaining Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Total Device Dissipation (Maximum @ Ta = 25 °C)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N6036G Description

Short technical summary and product information.

The 2N6036G is a PNP Darlington power transistor from On Semiconductor, designed for general purpose amplifier and low-speed switching applications. It is the complementary device to the NPN 2N6039G.

 

Key electrical specifications: maximum collector-emitter voltage (VCEO) of 80 V, continuous collector current of 4 A, and peak collector current of 8 A. The DC current gain (hFE) is a minimum of 750 at Ic = 2 A, Vce = 3 V. Collector-emitter saturation voltage is 3 V maximum at Ib = 40 mA, Ic = 4 A. Total device dissipation is 40 W at case temperature 25°C, derating 320 mW/°C above 25°C.

 

The transistor is housed in a TO-225AA / TO-126-3 package with through-hole mounting. The supplier device package is TO-126. It features ESD ratings (Machine Model >400 V, Human Body Model >8000 V) and the epoxy meets UL 94 V-0. The device is Pb-Free and RoHS3 compliant.

 

Typical applications include general purpose amplifiers and low-speed switching circuits where high current gain and medium power handling are required.

2N6036G Quick Information

Product Type: Transistor - Bipolar (BJT) - Single
Canonical Name: 2N6036G PNP Darlington Power Transistor
Subcategory: Power Transistor

2N6036G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N6036G Features

  • PNP Darlington power transistor.
  • 80V collector-emitter voltage rating.
  • 4A continuous collector current.
  • 40W power dissipation at case.
  • RoHS3 compliant and Pb-Free.

2N6036G Applications

  • Ideal for general purpose amplifiers.
  • Suitable for low-speed switching applications.
  • Used in power management circuits.
  • Complements NPN 2N6039G for push-pull stages.

2N6036G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the 2N6036G?

The junction temperature range is -65°C to 150°C.

Is the 2N6036G RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free per the datasheet.

What is the package type for the 2N6036G?

It is available in TO-225AA or TO-126-3 package, with supplier device package TO-126.

What is the collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is 80 V.

What is the continuous collector current rating?

The continuous collector current rating is 4 A.

What is the DC current gain (hFE) minimum?

The minimum DC current gain is 750 at Ic = 2 A, Vce = 3 V.

What is the power dissipation at case temperature?

The total device dissipation is 40 W at case temperature 25°C.

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