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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 642 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base-Emitter Saturation Voltage (Maximum @ 4A, 40mA) | |
| Base-Emitter Voltage (Typical @ 2A, 3V) | |
| Body Height | |
| Body Length | |
| Body Width | |
| Collector Base Capacitance (Maximum @ VCB=10 V, f=1 MHz, NPN type) | |
| Collector Base Capacitance (Maximum @ VCB=10 V, f=1 MHz, PNP type) | |
| Collector Cutoff Current (Maximum @ VCE=rated VCEO, IB=0) | |
| Collector Cutoff Current (Maximum @ VCE=rated VCEO, Tc=125 C) | |
| Collector Emitter Saturation Voltage (Maximum @ IC=2 A, IB=8 mA) | |
| Collector Peak Current | |
| Collector-Base Cut-off Current (Maximum @ VCE=rated VCBO) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Voltage (VCEO) | |
| Current | |
| DC Current Gain (Minimum @ IC=0.5 A, VCE=3 V) | |
| DC Current Gain (Minimum @ IC=4 A, VCE=3 V) | |
| DC Current Gain (Minimum/Maximum @ IC=2 A, VCE=3 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current (Maximum @ VEB=5V) | |
| Emitter-Base Voltage (VEBO) | |
| Lead Diameter | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Small Signal Current Gain (hfe) (Minimum @ 0.75A, 10V, 1kHz) | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Termination Style | |
| Thermal Resistance (Junction-Ambient) | |
| Thermal Resistance Junction-Case | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N6036 is a complementary silicon PNP Darlington power transistor manufactured by STMicroelectronics. It is designed for general purpose switching and amplifier applications. The device features an integrated antiparallel collector-emitter diode.
Key electrical ratings include a maximum collector-emitter voltage of 80V, a continuous collector current of 4A, and a peak collector current of 8A. The DC current gain (hFE) is a minimum of 500 at 0.5A and 750 at 2A, with a maximum of 15000 at 2A. The collector-emitter saturation voltage is a maximum of 2V at 2A and 3V at 4A. Total power dissipation is 40W at case temperature up to 25°C.
The transistor is mounted in a JEDEC SOT-32 plastic package (also known as TO-225AA or TO-126-3) with through-hole mounting. The package has a body height of 7.4-7.8mm, length of 15.4-16.0mm, and width of 10.5-10.8mm. Lead spacing is 2.2mm nominal.
The maximum collector-emitter voltage (VCEO) is 80V.
The maximum continuous collector current is 4A, with a peak current of 8A.
The 2N6036 is housed in a SOT-32 plastic package (also known as TO-225AA or TO-126-3) with through-hole mounting.
The maximum power dissipation is 40W at case temperature up to 25°C.
The maximum operating junction temperature is 150°C, and the storage temperature range is -65 to 150°C.
The minimum hFE is 500 at 0.5A, 750 at 2A, and 100 at 4A. The maximum hFE at 2A is 15000.
RoHS status is listed as RoHS3 Compliant but is unverified.