2N6034G PNP Darlington power transistor with 40V VCEO and 4A continuous collector current. Housed in TO-126 through-hole package, RoHS compliant.
Mfr Part #:

2N6034G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP Darlington power transistor with 40V VCEO and 4A continuous collector current. Housed in TO-126 through-hole package, RoHS compliant.
Total Stock: 1,520 pcs

2N6034G Available from 1 distributor

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2N6034G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Base Current (IB)
Collector Current - Peak (ICM)
Collector Cutoff Current (Maximum @ VCE=40 V, IB=0)
Collector Cutoff Current (Maximum @ Vce = 40 V, Vbe(off) = 1.5 V)
Collector-Emitter Sustaining Voltage (VCEO(sus))
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Rating (Human Body Model)
ESD Rating - Machine Model
Emitter-Base Voltage (VEBO)
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Supplier Device Package
Thermal Resistance Junction to Ambient (RθJA)
Thermal Resistance Junction-to-Case (RθJC)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N6034G Description

Short technical summary and product information.

2N6034G is a PNP Darlington complementary silicon power transistor from onsemi. It is designed for general purpose amplifier and low-speed switching applications. The device features a collector-emitter voltage (VCEO) of 40 V, continuous collector current of 4 A, and peak collector current of 8 A. Power dissipation is rated at 40 W when the case temperature is 25°C, with a derating of 320 mW/°C above that temperature.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 750 at Ic=2 A, Vce=3 V, and a maximum collector-emitter saturation voltage of 3 V at Ib=40 mA, Ic=4 A. The device is housed in a TO-225AA / TO-126-3 package and is through-hole mountable. It operates over a junction temperature range of -65°C to 150°C.

 

Typical applications include general purpose amplification and low-speed switching. The complementary NPN types are 2N6038G and 2N6039G. These devices are Pb-Free and RoHS compliant, and they carry ESD ratings above 8000 V (Human Body Model) and above 400 V (Machine Model).

2N6034G Quick Information

Product Type: PNP Darlington Transistor
Canonical Name: PNP Darlington Power Transistor
Subcategory: Bipolar (BJT) - Single

2N6034G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N6034G Features

  • PNP Darlington complementary silicon power transistor.
  • Rated for 40V collector-emitter voltage.
  • Handles 4A continuous collector current.
  • Power dissipation up to 40W at 25°C.
  • RoHS compliant and Pb-Free package.

2N6034G Applications

  • Ideal for general purpose audio amplifiers.
  • Suited for low-speed switching circuits.
  • Complementary to 2N6038G NPN transistor.

2N6034G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the 2N6034G?

The collector-emitter voltage (VCEO) is 40 V.

What package is the 2N6034G available in?

Through-hole package TO-225AA / TO-126-3, with supplier device package TO-126.

What is the operating temperature range?

-65°C to 150°C junction temperature.

Is the 2N6034G RoHS compliant?

Yes, RoHS3 compliant (Pb-Free).

What is the DC current gain (hFE) of the 2N6034G?

Minimum hFE is 750 at Ic=2 A, Vce=3 V.

What is the maximum collector-emitter saturation voltage?

Maximum Vce(sat) is 3 V at Ib=40 mA, Ic=4 A.

What is the power dissipation rating?

40 W at case temperature 25°C.

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