| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Forward Voltage | |
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| Output Voltage | |
| Power Dissipation | |
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| Storage Temperature |
The Central Semiconductor 2N6027 is a silicon programmable unijunction transistor designed for applications requiring adjustable characteristics such as Valley Current (IV), Peak Current (IP), and Intrinsic Standoff Ratio (η).
This device features a maximum Gate-Cathode Forward Voltage of 40V and a maximum Power Dissipation of 300mW at 25°C. It operates within a junction temperature range of -50°C to +100°C and a storage temperature range of -55°C to +150°C.
The 2N6027 is housed in a standard TO-92 package, suitable for through-hole mounting. Its programmable nature allows for flexibility in circuit design, making it a versatile component for electronic projects.
Key electrical characteristics include a maximum DC Forward Anode Current of 150mA and a maximum DC Gate Current of 50mA. The intrinsic standoff ratio can be adjusted, offering design advantages.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum anode-cathode voltage is 40V.
The 2N6027 is available in a TO-92 through-hole package.
The operating junction temperature range is -50°C to +100°C.
The peak non-repetitive forward current is 5.0A for a 10μs pulse.
The maximum DC forward anode current is 150mA.
Yes, the intrinsic standoff ratio is programmable via external resistors, with typical values from 0.2V to 1.6V depending on test conditions.
The output voltage is typically 6.0V with a maximum rise time of 80ns under test conditions of VB=20V and CC=0.2μF.