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The 2N5886 is a silicon NPN power transistor manufactured by Texas Instruments, housed in a TO-3 metal package. It is designed for use in power linear and switching applications, offering high power dissipation capabilities.
Key electrical characteristics include a maximum collector-emitter voltage of 80V and a maximum collector current of 25A. The device also boasts a high power dissipation rating of 200W at 25°C case temperature and a low thermal resistance junction-to-case of 0.875°C/W, facilitating efficient heat management.
This transistor is complementary to the 2N5883/2N5884 series. Its specifications make it suitable for various industrial equipment and general-purpose switching and amplifier applications where robust power handling is required.
The TO-3 package is a standard metal can package known for its durability and heat dissipation properties, typically requiring through-hole mounting.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N5886 is 80V.
The maximum continuous collector current (IC) for the 2N5886 is 25A.
The 2N5886 has a maximum power dissipation (PD) of 200W at 25°C case temperature.
The 2N5886 is supplied in a TO-3 metal case package.
The thermal resistance junction to case (Rth j-c) for the 2N5886 is 0.875°C/W.
The DC current gain (hFE) for the 2N5886 is a minimum of 35 at IC=3A, VCE=4V; typically 20 at IC=10A, VCE=4V; and a minimum of 4 at IC=25A, VCE=4V.