DistyParts Icon
2N5886 The 2N5886 is an NPN bipolar power transistor from Signetics rated for 80V VCEO and 25A continuous collector current with 200W power dissipation in a TO-3 through-hole package.
Mfr Part #:

2N5886

Available from 1 distributors
Mfr Name: Signetics
Signetics
The 2N5886 is an NPN bipolar power transistor from Signetics rated for 80V VCEO and 25A continuous collector current with 200W power dissipation in a TO-3 through-hole package.
✓ Total Stock: 1 pcs
$ Price Range: $0.09

2N5886 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
1 pcs
On Request
1 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2N5886 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Junction Temperature
Mounting Type
Storage Temperature
View Similar Products (0)

2N5886 Description

Short technical summary and product information.

The 2N5886 is an NPN bipolar junction transistor designed for high-power switching and amplification applications. It features a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current rating of 25A, with a peak current capability of 50A. The device can dissipate up to 200W at a case temperature of 25°C.

 

Electrical characteristics include a DC current gain (hFE) of 35 minimum at 3A collector current, a collector-emitter saturation voltage of 1V maximum at 15A, and a transition frequency of 4MHz. Switching times are specified with a typical rise time of 0.7µs, storage time of 1.0µs, and fall time of 0.8µs.

 

The transistor is housed in a TO-3 metal can package with through-hole mounting, suitable for direct attachment to heatsinks. The junction-to-case thermal resistance is 0.875°C/W, and the maximum junction temperature is 200°C.

2N5886 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N5886 NPN Bipolar Power Transistor
Subcategory: Single BJT

2N5886 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N5886 Estimated Pricing

Qty Low High
1+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5886 Features

  • 80V collector-emitter voltage rating.
  • 25A continuous collector current capability.
  • 200W power dissipation at 25°C case.
  • TO-3 through-hole metal package.
  • 4MHz typical transition frequency.

2N5886 Applications

  • Power switching and linear amplifiers.
  • Motor and actuator control circuits.
  • High-current voltage regulation modules.
  • Industrial power supply output stages.

2N5886 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N5886?

The maximum collector-emitter voltage (VCEO) is 80V.

What is the maximum collector current rating?

The maximum continuous collector current (IC) is 25A, with a peak current (ICM) of 50A.

What package is the 2N5886 available in?

The 2N5886 is available in a TO-3 through-hole package.

What is the power dissipation capability?

The maximum power dissipation is 200W at a case temperature of 25°C.

What is the operating junction temperature range?

The maximum junction temperature is 200°C, and the storage temperature range is -65°C to 200°C.

Home

Categories