2N5886

The 2N5886 is an NPN bipolar junction transistor manufactured by Solid State Devices Inc (SSDI). It is designed for high-power switching and amplification applications. The transistor features a maximum collector-emitter voltage of 80V and a maximum collector current of 25A, with a power dissipation of 200W. It has a DC current gain (hFE) of at least 35 at 3A collector current and 4V collector-emitter voltage. The transition frequency is 4 MHz. The device is housed in a TO-3 (TO-204AA) through-hole package, suitable for applications requiring robust thermal management. The operating junction temperature range is -65°C to 200°C. The collector-emitter saturation voltage is a maximum of 4V at 6.25A base current and 25A collector current. This transistor is typically used in power regulation, motor control, and high-current switching circuits. Its high power dissipation capability makes it suitable for use in linear amplifiers and power supplies. The through-hole mounting allows for easy installation on heatsinks for thermal dissipation.