| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15,478 pcs
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15478 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5886 is a high-power NPN bipolar junction transistor designed for general-purpose switching and amplification applications. Manufactured by NTE Electronics, this device is housed in a robust TO-204AA (TO-3) through-hole package, suitable for demanding environments.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of 80V and a continuous collector current (Ic) rating of 25A. The transistor can dissipate up to 200W of power, making it suitable for high-current circuits. It offers a minimum DC current gain (hFE) of 20 at a test condition of 10A collector current and 4V collector-emitter voltage. The maximum collector-emitter saturation voltage is 1V at a base current of 1.5A and collector current of 15A. The transition frequency (ft) is 4 MHz.
The device is designed for through-hole mounting and can operate over a junction temperature range of -65°C to 200°C. The TO-204 (TO-3) metal can package provides excellent thermal performance and mechanical durability.
The maximum collector-emitter voltage (Vce) is 80V.
The maximum continuous collector current (Ic) is 25A.
The maximum power dissipation (Pd) is 200W.
It uses a TO-204AA (TO-3) through-hole package.
The operating junction temperature range is -65°C to 200°C.
RoHS compliance is listed as RoHS3 Compliant but is unverified.