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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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21 pcs
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21 pcs | On Request | 1 | On Request | On Request | 949 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Current (Maximum @ Peak) | |
| Collector-Base Voltage (VCB) | |
| Collector-Emitter Voltage (VCEO) | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Derate above 25°C | |
| Emitter-Base Voltage (VEB) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5885G is an NPN silicon high-power bipolar junction transistor designed for general-purpose power amplifier and switching applications. It is part of the complementary high-power transistor family that includes the 2N5883/2N5884 (PNP) and 2N5885/2N5886 (NPN) types. Key ratings include a 60 V collector-emitter voltage, 60 V collector-base voltage, and 5.0 V emitter-base voltage. The device supports a continuous collector current of 25 A and a peak collector current of 50 A, making it suitable for high-current circuits.
At a case temperature of 25°C, the transistor can dissipate up to 200 W, with a derating factor of 1.15 W/°C above this temperature. The DC current gain (hFE) is at least 20 at Ic = 10 A and Vce = 4 V, and the current gain-bandwidth product is 4 MHz minimum. The collector-emitter saturation voltage is specified as 4 V maximum at Ib = 6.25 A and Ic = 25 A. The device operates over a junction temperature range of -65°C to +200°C.
The 2N5885G is supplied in a TO-204AA (TO-3) metal case package, a through-hole mounting style. The TO-3 package provides a low thermal resistance path for heat sinking. The 'G' suffix indicates lead-free (Pb-free) packaging, which is confirmed by the datasheet. Common applications include power amplifiers and switching circuits requiring high current and power handling.
The maximum collector-emitter voltage (VCEO) is 60 V.
The 2N5885G is available in a TO-204AA (TO-3) through-hole package, also supplied as TO-204 (TO-3).
The operating junction temperature range is -65°C to +200°C.
The part is listed as RoHS3 compliant in the database, though this status is unverified. The datasheet states that Pb-free packages are available.
The continuous collector current is 25 A, with a peak rating of 50 A.
The total device dissipation is 200 W at a case temperature of 25°C, derated at 1.15 W/°C above 25°C.
The minimum DC current gain (hFE) is 20 at Ic = 10 A and Vce = 4 V.