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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5885 from RCA is a silicon NPN power transistor designed for power linear and switching applications. It features a robust TO-3 package, making it suitable for demanding environments.
Key electrical specifications include a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 25A. The device can handle peak collector currents up to 50A and has a maximum power dissipation of 200W at 25℃ case temperature. Thermal characteristics include a low junction-to-case thermal resistance of 0.875℃/W.
This transistor is a complement to the 2N5883 and 2N5884 types. Its characteristics, such as a typical DC current gain (hFE) of 35 at 3A and a transition frequency (fT) of 4MHz, make it suitable for various power applications. The switching times, including rise, storage, and fall times, are also specified for performance evaluation in switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N5885 is 60V.
The maximum continuous collector current (IC) for the 2N5885 is 25A.
The maximum power dissipation (PD) for the 2N5885 is 200W at 25℃ case temperature.
The 2N5885 is supplied in a TO-3 package.
The thermal resistance junction to case (Rth j-c) for the 2N5885 is 0.875℃/W.
The DC current gain (hFE) of the 2N5885 is a minimum of 20 and a maximum of 100 at IC=10A and VCE=4V.