2N5884 PNP silicon high-power transistor rated for 80V collector-emitter voltage and 25A continuous collector current. Housed in a TO-204 (TO-3) through-hole package.
Mfr Part #:

2N5884

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP silicon high-power transistor rated for 80V collector-emitter voltage and 25A continuous collector current. Housed in a TO-204 (TO-3) through-hole package.
✓ Total Stock: 124 pcs
$ Price Range: $5.19 - $10.96

2N5884 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
123 pcs
123 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1 pcs
1 pcs On Request 1 On Request On Request On Request On Request On Request

2N5884 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N5884 Description

Short technical summary and product information.

The 2N5884 is a PNP silicon high-power transistor designed for general-purpose power amplifier and switching applications. It features a collector-emitter voltage rating of 80V and a continuous collector current of 25A, with a peak current capability of 50A. The device offers a maximum power dissipation of 200W at a case temperature of 25°C, derating linearly at 1.15 W/°C above 25°C.

 

With a minimum DC current gain (hFE) of 20 at 10A collector current and 4V collector-emitter voltage, and a low collector-emitter saturation voltage of 1.0V at 15A, the 2N5884 is suitable for linear and switching applications. The gain-bandwidth product (fT) is a minimum of 4 MHz at 1A, indicating good high-frequency performance for a power transistor.

 

The transistor is packaged in a TO-204AA (TO-3) through-hole metal case, providing excellent thermal performance. The junction-to-case thermal resistance is 0.875°C/W. The operating junction temperature range is -65°C to 200°C, allowing use in demanding environments. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited).

2N5884 Quick Information

Product Type: Bipolar Junction Transistor (BJT) - Single
Canonical Name: 2N5884 PNP Silicon High-Power Transistor
Subcategory: Power Transistor

2N5884 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2N5884 Estimated Pricing

Qty Low High
1+ $10.96 $10.96
10+ $7.58 $7.58
100+ $5.67 $5.67
500+ $5.19 $5.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5884 Features

  • PNP silicon high-power transistor design.
  • Rated for 80V collector-emitter voltage.
  • Supports 25A continuous collector current.
  • 200W power dissipation at 25°C case temperature.
  • Low saturation voltage of 1.0V at 15A.

2N5884 Applications

  • Used in general-purpose power amplifiers.
  • Suitable for high-current switching circuits.
  • Ideal for linear power supply designs.
  • Applicable in motor control and power conversion.

2N5884 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the 2N5884?

-65°C to 200°C (junction temperature).

What package is the 2N5884 available in?

TO-204AA (TO-3) through-hole package.

Is the 2N5884 RoHS compliant?

Yes, it is listed as RoHS3 compliant.

What is the maximum collector current of the 2N5884?

25A continuous, 50A peak.

What is the collector-emitter voltage rating of the 2N5884?

80V maximum (VCEO).

What is the DC current gain (hFE) of the 2N5884?

Minimum 20 at 10A collector current and 4V collector-emitter voltage.

What is the power dissipation of the 2N5884?

200W at 25°C case temperature, derate 1.15 W/°C above 25°C.

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