| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15,370 pcs
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15370 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5884 is a PNP silicon high-power transistor designed for general-purpose power amplifier and switching applications. It features a collector-emitter voltage (VCEO) of 80V and a continuous collector current rating of 25A, with a peak current capability of 50A. The device offers a DC current gain (hFE) of 20 minimum at 10A collector current and 4V collector-emitter voltage, and a current gain bandwidth product of 4 MHz.
Power dissipation is rated at 200W at a case temperature of 25°C, with a derating factor of 1.15 W/°C above 25°C. The transistor is housed in a TO-204AA (TO-3) through-hole metal package, providing robust thermal performance with a junction-to-case thermal resistance of 0.875 °C/W. The operating junction temperature range spans from -65°C to 200°C.
This complementary PNP transistor is designed to pair with NPN types such as the 2N5886 for push-pull amplifier configurations. Its low collector-emitter saturation voltage of 4V maximum at 25A collector current and low leakage current make it suitable for high-current switching and linear amplification circuits.
The collector-emitter voltage (VCEO) is 80V.
The maximum continuous collector current is 25A, with a peak rating of 50A.
It is available in a TO-204AA (TO-3) through-hole metal package.
The operating junction temperature range is -65°C to 200°C.
The RoHS status is listed as RoHS3 compliant, but this is unverified.
The total device dissipation is 200W at 25°C case temperature, derating at 1.15 W/°C above 25°C.
The minimum hFE is 20 at a test condition of Ic=10A, Vce=4V.