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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale 2N5804 is a silicon NPN power transistor designed for applications requiring high breakdown voltage and robust performance. Encased in a TO-3 package, this transistor is suitable for demanding tasks such as switching regulators, inverters, solenoid and relay drivers, and motor controls.
Key electrical characteristics include a collector-base voltage (VCBO) of up to 375V and a collector-emitter voltage (VCEO) of up to 300V. It can handle a continuous collector current (IC) of 5A and a total power dissipation (PD) of 110W at 25℃ case temperature. The transistor also features a DC current gain (hFE) ranging from 20 to 100 and a transition frequency (fT) of 15MHz.
With a junction temperature capability of 150℃ and a thermal resistance junction-to-case of 1.25℃/W, the 2N5804 is designed for reliable operation under load. The TO-3 package facilitates efficient heat dissipation, making it suitable for power applications. Its specifications make it a versatile component for various industrial and electronic power management systems.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage (VCBO) for the 2N5804 is 300V when the emitter is open.
The maximum collector-emitter voltage (VCEO) for the 2N5804 is 225V when the base is open.
The 2N5804 has a continuous collector current (IC) rating of 5A.
