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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor 2N5784 is a complementary NPN silicon power transistor designed for versatile use in general purpose switching and amplifier applications. It offers a Collector-Emitter Voltage (V CEO) of 65V and a continuous Collector Current (I C) of 3.5A, making it suitable for moderate power requirements.
Key electrical characteristics include a maximum Collector-Emitter Saturation Voltage (V CE(SAT)) of 0.5V at 1.0A collector current and 100mA base current, and a DC Current Gain (h FE) ranging from 20 to 150 at 1.0A collector current. The transistor also features a transition frequency (f T) of 1.0 to 4.0 MHz at 2.0V collector-emitter voltage and 100mA collector current.
This power transistor is packaged in a TO-39 case and is designed for through-hole mounting. Its operating and storage junction temperature range is from -65°C to +200°C. The 2N5784 is part of a complementary pair with the 2N5781 PNP transistor, offering design flexibility.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (V CEO) for the 2N5784 is 65V.
The 2N5784 transistor has a continuous collector current rating of 3.5A.
The 2N5784 is supplied in a TO-39 case.
The operating and storage junction temperature range for the 2N5784 is -65°C to +200°C.
The DC Current Gain (h FE) of the 2N5784 at IC=1.0A is between 20 and 150.
The turn-on time for the 2N5784 is a maximum of 5.0 μs under the specified test conditions.
The turn-off time for the 2N5784 is a maximum of 15 μs under the specified test conditions.