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2N5771 2N5771 is a PNP switching transistor from On Semiconductor. It features 15V VCEO, 200mA continuous collector current, and high-speed saturated switching performance.
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2N5771

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Mfr Name: On Semiconductor
On Semiconductor
2N5771 is a PNP switching transistor from On Semiconductor. It features 15V VCEO, 200mA continuous collector current, and high-speed saturated switching performance.
✓ Total Stock: 642 pcs

2N5771 Available from 1 distributor

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2N5771 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2N5771 Description

Short technical summary and product information.

The 2N5771 is a PNP switching transistor designed for very high speed saturated switching applications at collector currents up to 100 mA. It is manufactured by On Semiconductor and sourced from Process 65. This device offers a collector-emitter breakdown voltage (V(BR)CEO) of 15 V minimum and a continuous collector current rating of 200 mA. The total power dissipation is 350 mW at 25°C ambient, with a derating factor of 2.8 mW/°C above 25°C.

 

Key electrical characteristics include a DC current gain (hFE) range of 35 to 120 at 1 mA and 50 to 120 at 10 mA, and a low collector-emitter saturation voltage of 0.18 V maximum at 10 mA. Switching performance is characterized by typical turn-on time of 15 ns, turn-off time of 20 ns, and storage time of 20 ns.

 

The device is available in a through-hole TO-92-3 (TO-226-3) package with a junction-to-ambient thermal resistance of 357°C/W. It operates over a junction temperature range of -55°C to 150°C, making it suitable for general-purpose and low-power switching circuits.

2N5771 Quick Information

Product Type: PNP Bipolar Junction Transistor
Canonical Name: 2N5771 PNP Switching Transistor
Subcategory: Switching Transistor

2N5771 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

2N5771 Features

  • High-speed saturated switching transistor.
  • 15V collector-emitter breakdown voltage.
  • 200mA continuous collector current.
  • TO-92-3 through-hole package.
  • RoHS3 compliant.

2N5771 Applications

  • Ideal for high-speed saturated switching circuits.
  • Used in low-power switching applications.
  • Suitable for general purpose switching.
  • Designed for collector currents up to 100 mA.

2N5771 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the 2N5771?

The maximum collector-emitter voltage (VCEO) is 15 V.

What package does the 2N5771 come in?

The 2N5771 is available in a TO-92-3 (TO-226-3) through-hole package.

What is the operating temperature range of the 2N5771?

The device operates over a junction temperature range of -55°C to 150°C.

Is the 2N5771 RoHS compliant?

Yes, the 2N5771 is RoHS3 compliant (unverified).

What is the DC current gain (hFE) of the 2N5771?

The DC current gain (hFE) ranges from 35 to 120 at IC=1 mA, VCE=0.5 V, and from 50 to 120 at IC=10 mA, VCE=0.3 V.

What are the switching times of the 2N5771?

Typical switching times are: turn-on 15 ns, turn-off 20 ns, and storage time 20 ns.

What is the maximum collector current of the 2N5771?

The maximum continuous collector current is 200 mA.

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