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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
660 pcs
|
660 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Capacitance | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Voltage (VCEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Storage Time | |
| Supplier Device Package | |
| Transistor Type | |
| Turn Off Time | |
| Turn On Time | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5769 is an NPN switching transistor from On Semiconductor, designed for high-speed saturated switching applications. Key electrical characteristics include a collector-emitter voltage of 15 V, collector-base voltage of 40 V, and emitter-base voltage of 4.5 V. It can handle a continuous collector current of 200 mA and dissipates up to 350 mW. The DC current gain is at least 40 at 10 mA collector current. The transistor offers fast switching with typical turn-on time of 12 ns and turn-off time of 18 ns. It is housed in a TO-92-3 through-hole package, suitable for general-purpose switching and amplification. The device operates over a junction temperature range of -55°C to 150°C.
15 V.
TO-92-3 through-hole package.
-55°C to 150°C (junction).
RoHS3 compliant per existing data, but unverified.
200 mA continuous.
12 ns.
40 at 10 mA collector current and 350 mV Vce.