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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19 pcs
|
19 pcs | On Request | 1 | On Request | On Request | 946 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Collector-Base Voltage (VCB) | |
| Collector-Emitter Sustaining Voltage (VCEO(sus)) | |
| Collector-Emitter Voltage (VCEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEB) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Maximum @ Ic = 25 A) | |
| Voltage |
The 2N5686G is a high-current NPN silicon power transistor designed for high-power amplifier and switching circuit applications. Manufactured by On Semiconductor, this device offers a continuous collector current rating of 50 A and a collector-emitter voltage (VCEO) of 80 V.
Key electrical characteristics include a DC current gain (hFE) of 15 minimum at 25 A collector current and 2 V collector-emitter voltage, and a low collector-emitter saturation voltage of 1.0 V maximum at 25 A. The transistor can dissipate up to 300 W at a case temperature of 25°C, with a junction-to-case thermal resistance of 0.584 °C/W.
The device is housed in a TO-204AE (TO-3) metal case with through-hole mounting, suitable for robust industrial and commercial power circuits. The Pb-free (G suffix) version is available, as indicated in the datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $19.47 | $19.47 |
| 10+ | $13.92 | $13.92 |
| 100+ | $10.92 | $10.92 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 80 V.
The maximum continuous collector current (IC) is 50 A.
The maximum power dissipation is 300 W at a case temperature of 25°C.
The 2N5686G is available in a TO-204AE (TO-3) through-hole package.
The operating junction temperature range is -65°C to 200°C.
The RoHS status is listed as RoHS3 Compliant but is unverified. The datasheet indicates a Pb-free (G suffix) package is available.
The minimum DC current gain (hFE) is 15 at a collector current of 25 A and collector-emitter voltage of 2 V.