2N5686G 2N5686G is an NPN silicon power transistor from On Semiconductor. It features 80V collector-emitter voltage, 50A continuous collector current, and 300W power dissipation in a TO-204 (TO-3) through-hole package.
Mfr Part #:

2N5686G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
2N5686G is an NPN silicon power transistor from On Semiconductor. It features 80V collector-emitter voltage, 50A continuous collector current, and 300W power dissipation in a TO-204 (TO-3) through-hole package.
Total Stock: 19 pcs
$ Price Range: $10.92 - $19.47

2N5686G Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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19 pcs
19 pcs On Request 1 On Request On Request 946 On Request On Request

2N5686G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Collector-Base Voltage (VCB)
Collector-Emitter Sustaining Voltage (VCEO(sus))
Collector-Emitter Voltage (VCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEB)
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Vce Saturation (Maximum @ Ic = 25 A)
Voltage

2N5686G Description

Short technical summary and product information.

The 2N5686G is a high-current NPN silicon power transistor designed for high-power amplifier and switching circuit applications. Manufactured by On Semiconductor, this device offers a continuous collector current rating of 50 A and a collector-emitter voltage (VCEO) of 80 V.

 

Key electrical characteristics include a DC current gain (hFE) of 15 minimum at 25 A collector current and 2 V collector-emitter voltage, and a low collector-emitter saturation voltage of 1.0 V maximum at 25 A. The transistor can dissipate up to 300 W at a case temperature of 25°C, with a junction-to-case thermal resistance of 0.584 °C/W.

 

The device is housed in a TO-204AE (TO-3) metal case with through-hole mounting, suitable for robust industrial and commercial power circuits. The Pb-free (G suffix) version is available, as indicated in the datasheet.

2N5686G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N5686G NPN Bipolar Power Transistor
Subcategory: Single BJT

2N5686G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N5686G Estimated Pricing

Qty Low High
1+ $19.47 $19.47
10+ $13.92 $13.92
100+ $10.92 $10.92

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5686G Features

  • NPN silicon power transistor design.
  • 80V collector-emitter voltage rating.
  • 50A continuous collector current capability.
  • 300W power dissipation at 25°C case.
  • TO-204 (TO-3) through-hole metal package.

2N5686G Applications

  • High-power audio amplifier output stages.
  • Switching power supply circuits.
  • Motor and actuator drive controls.
  • Industrial power regulation systems.

2N5686G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the 2N5686G?

The maximum collector-emitter voltage (VCEO) is 80 V.

What is the continuous collector current rating of the 2N5686G?

The maximum continuous collector current (IC) is 50 A.

What is the power dissipation of the 2N5686G?

The maximum power dissipation is 300 W at a case temperature of 25°C.

What package does the 2N5686G come in?

The 2N5686G is available in a TO-204AE (TO-3) through-hole package.

What is the operating temperature range of the 2N5686G?

The operating junction temperature range is -65°C to 200°C.

Is the 2N5686G RoHS compliant?

The RoHS status is listed as RoHS3 Compliant but is unverified. The datasheet indicates a Pb-free (G suffix) package is available.

What is the DC current gain (hFE) of the 2N5686G?

The minimum DC current gain (hFE) is 15 at a collector current of 25 A and collector-emitter voltage of 2 V.

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