| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5686 is an NPN bipolar junction transistor designed for high-power switching and amplification applications. It is manufactured by NTE Electronics and comes in a through-hole TO-204AE package, also known as TO-3.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of 80V, a maximum collector current (Ic) of 50A, and a maximum power dissipation (Pd) of 300W. The transistor has a minimum DC current gain (hFE) of 15 at Ic=25A and Vce=2V, and a maximum Vce saturation of 1V at Ib=2.5A and Ic=25A. The transition frequency is 2 MHz.
The device is suitable for applications requiring high current and power handling, such as power supplies, motor controls, and audio amplifiers. The operating junction temperature range is -65°C to 200°C. The transistor is mounted via through-hole, making it suitable for robust, high-reliability designs.
80V.
TO-204AE (also known as TO-3).
-65°C to 200°C (junction).
Yes, it is listed as RoHS3 compliant, but this is unverified.
50A.
300W.
15 at Ic=25A, Vce=2V.