| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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775 pcs
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775 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ISSI 2N5682 is an NPN silicon power transistor manufactured using the epitaxial planar process. It is designed for general purpose amplifier and switching applications where high voltages are required.
Key electrical specifications include a Collector-Emitter Voltage (VCEO) of 100V, a Continuous Collector Current (IC) of 1.0A, and a Continuous Base Current (IB) of 0.5A. The device offers a maximum power dissipation of 1.0W at ambient temperature and 10W at 25°C case temperature. Thermal resistance is rated at 175 °C/W (junction-to-ambient) and 17.5 °C/W (junction-to-case).
Electrical characteristics include a DC Current Gain (hFE) ranging from 40 to 150 at IC=250mA and VCE=2.0V. The transition frequency (fT) is a minimum of 30 MHz at 10V and 100mA. The output capacitance (Cob) is a maximum of 50 pF at 20V and 1.0MHz.
This transistor comes in a TO-39 package and is suitable for through-hole mounting. The operating and storage junction temperature range is -65°C to +200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N5682 is 100V.
The maximum Continuous Collector Current (IC) for the 2N5682 is 1.0A.
The 2N5682 is available in a TO-39 package.
The operating and storage junction temperature range for the 2N5682 is -65°C to +200°C.
The DC Current Gain (hFE) for the 2N5682 ranges from 40 to 150 at IC=250mA and VCE=2.0V.