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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5679 is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring a collector-emitter voltage up to 100V and a continuous collector current of 1A.
Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 250mA collector current and 2V collector-emitter voltage, and a maximum collector-emitter saturation voltage of 1V at 500mA collector current and 50mA base current. The device dissipates up to 1W of power.
The transistor is housed in a TO-205AD / TO-39-3 metal can package with through-hole mounting, suitable for socket or soldered assembly. The supplier device package is TO-39.
| Qty | Low | High |
|---|---|---|
| 1+ | $21.73 | $21.73 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vce) is 100V.
The maximum continuous collector current (Ic) is 1A.
The 2N5679 is available in a TO-205AD / TO-39-3 metal can package (through-hole), with supplier device package TO-39.
The power dissipation (Pd) is 1W.
The minimum DC current gain (hFE) is 40 at Ic=250mA and Vce=2V.
The maximum collector-emitter saturation voltage (Vce(sat)) is 1V at Ib=50mA and Ic=500mA.
The 2N5679 is listed as RoHS3 Compliant, but this status is unverified.