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2N5679 2N5679 is a PNP bipolar junction transistor from Microchip Technology. It features 100V collector-emitter voltage, 10µA collector current, and a TO-39 through-hole package.
Mfr Part #:

2N5679

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
2N5679 is a PNP bipolar junction transistor from Microchip Technology. It features 100V collector-emitter voltage, 10µA collector current, and a TO-39 through-hole package.
✓ Total Stock: 57,000 pcs
$ Price Range: $21.73

2N5679 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
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57,000 pcs
On Request
57000 pcs On Request 1 On Request On Request On Request On Request On Request
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2N5679 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
SVHC Present
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2N5679 Description

Short technical summary and product information.

The 2N5679 is a PNP bipolar junction transistor manufactured by Microchip Technology. It is designed for through-hole mounting and is supplied in a TO-205AD (TO-39-3) metal can package, also referenced as TO-39 (TO-205AD).

 

Electrical characteristics include a maximum collector-emitter voltage (Vce) of 100 V, a maximum collector current (Ic) of 10 µA, and a maximum power dissipation of 1 W. The DC current gain (hFE) is at least 40 when measured at a collector current of 250 mA and a collector-emitter voltage of 2 V. The collector-emitter saturation voltage is limited to 1 V at a base current of 50 mA and a collector current of 500 mA.

 

The junction operating temperature range is -65°C to 200°C. With its through-hole mounting and metal can package, the device provides robust heat dissipation and is suitable for discrete transistor circuits in industrial and general-purpose applications.

2N5679 Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: 2N5679 PNP Bipolar Transistor
Subcategory: Single BJT

2N5679 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N5679 Estimated Pricing

Qty Low High
1+ $21.73 $21.73

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5679 Features

  • High-voltage PNP bipolar transistor.
  • 100V collector-emitter voltage rating.
  • 1W power dissipation capability.
  • TO-39 metal can through-hole package.
  • Operating junction temperature to 200°C.

2N5679 Applications

  • High-voltage switching circuits.
  • Analog signal amplification stages.
  • Through-hole PCB discrete designs.

2N5679 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the transistor type of the 2N5679?

The 2N5679 is a PNP bipolar junction transistor.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (Vce) is 100 V.

What is the maximum collector current?

The maximum collector current (Ic) is 10 µA.

What is the package type?

The package is TO-205AD (TO-39-3) metal can, with supplier device package TO-39 (TO-205AD).

What is the operating temperature range?

The junction operating temperature range is -65°C to 200°C.

Is the 2N5679 RoHS compliant?

Precomputed data indicates RoHS3 compliant, but this status is unverified from an official source.

What is the minimum DC current gain (hFE)?

The minimum DC current gain is 40 at a collector current of 250 mA and collector-emitter voltage of 2 V.

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