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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5664 is an NPN bipolar junction transistor manufactured by Microchip Technology. It is designed for through-hole mounting and is supplied in a TO-66 (TO-213AA) package.
Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 200V, a continuous collector current (Ic) rating of 5A, and a maximum power dissipation of 2.5W. The device offers a minimum DC current gain (hFE) of 40 at 1A collector current and 5V Vce, and a low collector-emitter saturation voltage of 400mV maximum at 300mA base current and 3A collector current.
The transistor can operate over a junction temperature range of -65°C to 200°C. The TO-66 metal can package provides robust thermal performance suitable for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $43.78 | $43.78 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) is 200V.
The maximum continuous collector current (Ic) is 5A.
It is supplied in a TO-66 (TO-213AA) through-hole package.
The junction operating temperature range is -65°C to 200°C.
The minimum DC current gain (hFE) is 40 at Ic=1A and Vce=5V.
The part is listed as RoHS3 compliant, but this status is unverified.