| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Frequency | |
| Gain | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel |
The NXP BLF7G24L-100G is a high-performance RF Power MOSFET utilizing LDMOS technology. It is designed for amplifier applications within the S-band frequency range, specifically from 2.3GHz to 2.4GHz.
Key electrical characteristics include a maximum drain current of 28A and a minimum breakdown voltage of 65V. The device provides a nominal output power of 20W with a gain of 18dB. It is tested at 900mA current and 28V. The MOSFET is constructed with a silicon N-channel element and features a METAL-OXIDE SEMICONDUCTOR FET technology.
Packaged in an SOT-502A case, the BLF7G24L-100G is supplied on tape and reel. Its robust design and specifications make it suitable for various RF power amplification tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain current (ID) for the BLF7G24L-100G is 28A.
The minimum breakdown voltage (DS Breakdown Voltage-Min) for the BLF7G24L-100G is 65V.
The BLF7G24L-100G operates in the frequency range of 2.3GHz to 2.4GHz.
The nominal output power for the BLF7G24L-100G is 20W.
The BLF7G24L-100G is supplied in an SOT-502A package.