| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Supplier Device Package | |
| Tape & Reel | |
| Voltage |
The 2N5638 is an N-channel JFET (Junction Field-Effect Transistor) manufactured by On Semiconductor. It is designed for low-level analog switching, sample and hold circuits, and chopper stabilized amplifiers. Key electrical specifications include a drain-source voltage (Vdss) of 30V, zero-gate voltage drain current (IDSS) of 50 mA typical, and a maximum drain-source on-resistance (rDS(on)) of 30 Ω at VGS=0V and ID=1.0mA. The device features low input capacitance (Ciss) of 10pF and reverse transfer capacitance (Crss) of 4.0pF, contributing to fast switching speeds with typical turn-on delay of 4ns, rise time 5ns, turn-off delay 5ns, and fall time 10ns. The JFET is housed in a through-hole TO-92-3 package (TO-226-3), suitable for easy PCB mounting. Maximum power dissipation is 350mW at 25°C case temperature, with junction-to-case thermal resistance of 125°C/W and junction-to-ambient of 357°C/W. The operating temperature range is -55°C to 150°C. This device is indicated as RoHS3 compliant and REACH unaffected, though compliance data is unverified.
The maximum drain-source voltage (Vdss) is 30V.
The package is TO-226-3, TO-92-3 (TO-226AA); the supplier device package is TO-92-3.
The operating junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant, but this status is unverified.
The zero-gate voltage drain current (IDSS) is 50 mA typical at VDS = 20V.
The drain-source on-resistance is 30 Ω maximum at VGS = 0V and ID = 1.0mA.
Typical switching times: turn-on delay 4ns, rise time 5ns, turn-off delay 5ns, fall time 10ns.