| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The DY 2N5627 is a silicon PNP power transistor housed in a TO-3 package. It is designed for audio and general-purpose applications, offering an excellent safe operating area and low collector-emitter saturation voltage.
Key electrical characteristics include a collector-base voltage rating of up to 100V (for 2N5627) and a collector-emitter voltage of up to 120V. The continuous collector current is rated at 10A, with a total power dissipation of 100W at 25℃ case temperature. The transistor features a thermal resistance junction-to-case of 1.5℃/W.
This device is suitable for various applications requiring robust power handling. Its specifications make it a reliable choice for circuit designs demanding stable performance under load. The TO-3 package facilitates efficient heat dissipation, crucial for high-power operations.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N5627 is 120V when the base is open.
The maximum continuous collector current (IC) for the 2N5627 is 10A.
The total power dissipation (PD) for the 2N5627 is 100W at a case temperature of 25℃.
The thermal resistance junction to case (Rth j-c) for the 2N5627 is 1.5℃/W.
The DC current gain (hFE) for the 2N5627 is typically between 70 and 200 at IC=5A and VCE=5V.
The transition frequency (fT) for the 2N5627 is typically 40MHz at IC=1A and VCE=12V.