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2N5583 2N5583 is a PNP silicon RF transistor with 30V collector-emitter breakdown, 500mA collector current, 1W power dissipation, 1.3GHz transition frequency, in TO-39 metal can package.
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2N5583

Available from 1 distributors
Mfr Name: Solid State Devices Inc (SSDI)
Solid State Devices Inc (SSDI)
2N5583 is a PNP silicon RF transistor with 30V collector-emitter breakdown, 500mA collector current, 1W power dissipation, 1.3GHz transition frequency, in TO-39 metal can package.
✓ Total Stock: 3,600 pcs

2N5583 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,600 pcs
On Request
3600 pcs On Request 1 On Request On Request On Request On Request On Request
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2N5583 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Voltage
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2N5583 Description

Short technical summary and product information.

The 2N5583 is a PNP silicon bipolar junction transistor designed for RF applications. It features a maximum collector-emitter breakdown voltage of 30V and a maximum collector current of 500mA. The device offers a transition frequency of 1.3GHz and a minimum DC current gain (hFE) of 25 at 100mA and 2V.

 

This transistor is housed in a TO-39 metal can package (also known as TO-205AD) and uses through-hole mounting. It can operate over a junction temperature range of -65°C to 200°C. The maximum power dissipation is 1W.

 

Typical applications include RF amplification, oscillators, and switching circuits in commercial and industrial equipment. The device is claimed to be RoHS3 compliant, REACH unaffected, and MSL level 1, though these compliance claims are unverified.

2N5583 Quick Information

Product Type: Bipolar (BJT) RF Transistor
Canonical Name: 2N5583 PNP Silicon RF Transistor
Subcategory: RF Transistors

2N5583 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N5583 Features

  • PNP silicon RF transistor design.
  • 30V collector-emitter breakdown voltage.
  • 500mA maximum collector current.
  • 1.3GHz transition frequency.
  • Through-hole TO-39 metal can package.

2N5583 Applications

  • Ideal for RF amplifier circuits.
  • Used in high-frequency oscillator designs.
  • Suitable for general purpose RF switching.
  • Applicable in commercial and industrial RF equipment.

2N5583 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the 2N5583?

The maximum collector-emitter breakdown voltage (Vce) is 30V.

What is the maximum collector current of the 2N5583?

The maximum collector current (Ic) is 500mA.

What is the transition frequency of the 2N5583?

The transition frequency (ft) is 1.3GHz.

What package does the 2N5583 come in?

The 2N5583 is available in a TO-39 metal can package (also TO-205AD).

What is the operating temperature range of the 2N5583?

The operating junction temperature range is -65°C to 200°C.

Is the 2N5583 RoHS compliant?

According to distributor data, the 2N5583 is RoHS3 compliant, but this claim is unverified.

What is the DC current gain (hFE) of the 2N5583?

The minimum DC current gain (hFE) is 25 at Ic = 100mA and Vce = 2V.

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