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2N5582 The Motorola Semiconductor 2N5582 is an NPN Silicon Transistor designed for medium-speed switching and amplification applications. It features a TO-46 package.
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2N5582

Available from 1 distributors
Mfr Name: Motorola Semicondutor
Motorola Semicondutor
The Motorola Semiconductor 2N5582 is an NPN Silicon Transistor designed for medium-speed switching and amplification applications. It features a TO-46 package.
✓ Total Stock: 16 pcs
$ Price Range: $0.77

2N5582 Available from 1 distributor

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16 pcs
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2N5582 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2N5582 Description

Short technical summary and product information.

The 2N5582 from Motorola Semiconductor is an NPN silicon annular hermetic transistor. It is widely used for applications as medium-speed switches and as amplifiers from audio to VHF frequencies.

 

Key electrical characteristics include a Collector-Emitter Breakdown Voltage (BVEBO) of 40V, a Collector-Base Breakdown Voltage (BVCBO) of 75V, and an Emitter-Base Breakdown Voltage (BVEBO) of 6.0V. The continuous collector current (IC) is rated at 800mA.

 

This transistor has a maximum power dissipation (PD) of 0.5W at 25°C ambient temperature and 2.0W at 25°C case temperature. The operating and storage junction temperature range is from -65°C to +200°C.

 

The 2N5582 is housed in a TO-46 package.

2N5582 Quick Information

Product Type: NPN Silicon Transistor
Canonical Name: 2N5582 NPN Silicon Transistor
Subcategory: NPN

2N5582 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N5582 Estimated Pricing

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1+ $0.77 $0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5582 Features

  • NPN Silicon Annular Hermetic Transistor
  • 40V Collector-Emitter Breakdown Voltage
  • 800mA Continuous Collector Current
  • 0.5W Power Dissipation @ 25°C Ambient
  • TO-46 Package

2N5582 Applications

  • Medium-speed switching applications
  • Amplifier applications
  • Audio frequency amplification
  • VHF frequency amplification

2N5582 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the Collector-Emitter Breakdown Voltage for the 2N5582?

The Collector-Emitter Breakdown Voltage (BVEBO) for the 2N5582 is 40V.

What is the maximum continuous collector current for the 2N5582?

The maximum continuous collector current (IC) for the 2N5582 is 800mA.

What is the package type of the 2N5582 transistor?

The 2N5582 transistor is supplied in a TO-46 package.

What is the operating temperature range for the 2N5582?

The operating and storage junction temperature range for the 2N5582 is -65°C to +200°C.

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