2N5551TFR NPN general-purpose amplifier transistor with 160V collector-emitter voltage and 600mA continuous collector current. Housed in a TO-92-3 through-hole package.
Mfr Part #:

2N5551TFR

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN general-purpose amplifier transistor with 160V collector-emitter voltage and 600mA continuous collector current. Housed in a TO-92-3 through-hole package.
✓ Total Stock: 44,884 pcs
$ Price Range: $0.06 - $0.30

2N5551TFR Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
43,020 pcs
43020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,864 pcs
1864 pcs On Request 1 On Request On Request On Request On Request On Request

2N5551TFR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Industrial Grade
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N5551TFR Description

Short technical summary and product information.

The 2N5551TFR is an NPN bipolar junction transistor designed for general-purpose high-voltage amplifier and gas discharge display driver applications. It features a maximum collector-emitter voltage (VCEO) of 160V, collector-base voltage (VCBO) of 180V, and continuous collector current of 600mA. The device offers a DC current gain (hFE) range of 80 to 250 at Ic=10mA, Vce=5V, and a typical current gain bandwidth product (fT) of 100MHz. The maximum total device dissipation is 625mW at 25°C ambient temperature. The transistor is housed in a TO-92-3 through-hole package (TO-226-3, TO-92-3 (TO-226AA) formed leads) and is suitable for through-hole mounting. It is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free as per the datasheet. The operating junction temperature range is -55°C to 150°C.

2N5551TFR Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2N5551
Canonical Name: 2N5551TFR NPN General-Purpose Amplifier Transistor
Subcategory: General-Purpose Amplifier

2N5551TFR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N5551TFR Estimated Pricing

Qty Low High
1+ $0.30 $0.30
10+ $0.18 $0.18
100+ $0.11 $0.11
500+ $0.08 $0.08
1,000+ $0.07 $0.07
2,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5551TFR Features

  • NPN general-purpose high-voltage amplifier transistor.
  • Maximum VCEO of 160V for high-voltage applications.
  • Continuous collector current rating of 600mA.
  • DC current gain range of 80 to 250.
  • RoHS3 compliant and halogen-free.

2N5551TFR Applications

  • Ideal for high-voltage amplifier circuits.
  • Used in gas discharge display drivers.
  • Suitable for general-purpose switching applications.
  • Applicable in audio preamplifier stages.

2N5551TFR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N5551TFR?

The maximum collector-emitter voltage (VCEO) is 160V.

What package does the 2N5551TFR come in?

It comes in a TO-92-3 through-hole package (TO-226-3, TO-92-3 (TO-226AA) formed leads).

What is the operating temperature range of the 2N5551TFR?

The operating junction temperature range is -55°C to 150°C.

Is the 2N5551TFR RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free as per the datasheet.

What is the DC current gain (hFE) of the 2N5551TFR?

The DC current gain ranges from 80 to 250 at Ic=10mA, Vce=5V.

What is the maximum collector current of the 2N5551TFR?

The maximum continuous collector current is 600mA.

What is the typical transition frequency of the 2N5551TFR?

The typical current gain bandwidth product (fT) is 100MHz at Ic=10mA, Vce=10V, f=100MHz.

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