| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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66,000 pcs
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66000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5551TA is an NPN general-purpose amplifier transistor from On Semiconductor, designed for high-voltage amplifiers and gas discharge display drivers. It features a maximum collector-emitter voltage (VCEO) of 160V, collector-base voltage (VCBO) of 180V, and emitter-base voltage (VEBO) of 6V. The continuous collector current (IC) is rated at 600mA, with a total device dissipation of 625mW at 25°C ambient.
The transistor offers a DC current gain (hFE) range of 80-250 at Ic=10mA, Vce=5V, and a transition frequency (fT) of 100 MHz. The output capacitance (Cobo) is 6pF and input capacitance (Cibo) is 20pF. The device is housed in a through-hole TO-92-3 package (TO-226-3, TO-92-3 (TO-226AA) Formed Leads). It operates over a junction temperature range of -55°C to 150°C, with thermal resistance junction-to-ambient of 200°C/W and junction-to-case of 83.3°C/W.
This device is Pb-Free, Halogen Free/BFR Free, and RoHS3 compliant, making it suitable for environmentally conscious designs. The 2N5551TA is a reliable choice for general-purpose high-voltage amplification and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.30 | $0.30 |
| 10+ | $0.18 | $0.18 |
| 100+ | $0.11 | $0.11 |
| 500+ | $0.08 | $0.08 |
| 1,000+ | $0.07 | $0.07 |
| 2,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 160V.
The 2N5551TA is available in a through-hole TO-92-3 package (TO-226-3, TO-92-3 (TO-226AA) Formed Leads).
The operating junction temperature range is from -55°C to 150°C.
Yes, the 2N5551TA is RoHS3 compliant. It is also Pb-Free and Halogen Free/BFR Free.
The maximum continuous collector current is 600 mA.
The DC current gain (hFE) ranges from 80 to 250 at Ic=10mA, Vce=5V.
The transition frequency (fT) is typically 100 MHz at Ic=10mA, Vce=10V, f=100MHz.