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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The 2N5551RLRAG is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical specifications include a collector-emitter voltage (Vceo) of 160V, a collector current (Ic) of 600mA, and a power dissipation (Pd) of 625mW. The device offers a minimum DC current gain (hFE) of 80 at 10mA collector current and 5V collector-emitter voltage, with a maximum collector-emitter saturation voltage of 200mV at 50mA collector current. The transition frequency (ft) is 300MHz, making it suitable for high-frequency signal processing.
The transistor is housed in a TO-226-3 / TO-92-3 Long Body package with formed leads, designed for through-hole mounting. The supplier device package is TO-92 (TO-226). It operates over a junction temperature range of -55°C to 150°C.
The collector-emitter voltage (Vceo) is 160V.
The maximum collector current (Ic) is 600mA.
The power dissipation (Pd) is 625mW.
The transition frequency (ft) is 300MHz.
It comes in a TO-226-3 / TO-92-3 Long Body (Formed Leads) through-hole package.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant, though this is unverified.