Mfr Part #:

2N5551BU

NPN general-purpose amplifier transistor with 160V collector-emitter voltage and 600mA continuous collector current. Housed in a TO-92-3 through-hole package.

✓ Total Stock: 22,110 pcs

$ Price Range: $0.06 - $0.28

2N5551BU Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	20,000 pcs On Request	20000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	2,110 pcs On Request	2110 pcs	On Request	1	On Request	On Request	2016+	On Request	On Request

2N5551BU Description

Short technical summary and product information.

The 2N5551BU is an NPN general-purpose amplifier transistor from On Semiconductor, designed for high-voltage amplifier and gas discharge display driver applications. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 160V, collector-base voltage (VCBO) of 180V, emitter-base voltage (VEBO) of 6V, and continuous collector current of 600mA. DC current gain (hFE) ranges from 80 to 250 at Ic=10mA, Vce=5V, with a maximum saturation voltage of 200mV at Ib=5mA, Ic=50mA. The transition frequency is 100MHz, and output capacitance is 6pF. Total device dissipation is 625mW with derating above 25°C, and the operating junction temperature range is -55°C to 150°C. The transistor is offered in a TO-92-3 through-hole package (TO-226-3, TO-92-3 (TO-226AA)) and is RoHS compliant, Pb-Free, and Halogen Free/BFR Free.

2N5551BU Quick Information

Product Type: Bipolar Junction Transistor (BJT)

Canonical Name: 2N5551BU NPN General-Purpose Amplifier Transistor

Subcategory: General-Purpose Amplifier

2N5551BU Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

2N5551BU Estimated Pricing

Qty	Low	High
1+	$0.28	$0.28
10+	$0.17	$0.17
100+	$0.11	$0.11
500+	$0.07	$0.07
1,000+	$0.06	$0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5551BU Features

160V collector-emitter voltage rating.
600mA continuous collector current.
TO-92-3 through-hole package.
RoHS compliant and Pb-Free.
100MHz transition frequency.

2N5551BU Applications

General-purpose high-voltage amplifier circuits.
Gas discharge display driver applications.
Switching and linear amplification stages.

2N5551BU FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage of the 2N5551BU?

The maximum collector-emitter voltage (VCEO) is 160V.

What package does the 2N5551BU come in?

The 2N5551BU is available in a TO-92-3 through-hole package.

What is the operating temperature range of the 2N5551BU?

The operating temperature range is -55°C to 150°C (junction).

Is the 2N5551BU RoHS compliant?

Yes, the 2N5551BU is RoHS3 compliant and Pb-Free.

What is the DC current gain (hFE) of the 2N5551BU?

The DC current gain ranges from 80 to 250 at Ic=10mA, Vce=5V.

What is the collector-emitter saturation voltage?

The maximum VCE(sat) is 200mV at Ib=5mA, Ic=50mA.

What is the maximum power dissipation?

The maximum total device dissipation is 625mW.

Category	Transistors - Bipolar (BJT) - Single
Manufacturer Name	On Semiconductor
AEC Qualified	No
Automotive Grade	No
Current	600 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Frequency	100 MHz
Halogen Free	Yes
Industrial Grade	No
Input Capacitance	20 pF
Lead Spacing	2.54 mm mm
Lead Style	Through Hole
Medical Grade	No
Military Grade	No
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power	625 mW
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	TO-92-3
Tape & Reel	No
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Voltage	160 V