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2N5551

The 2N5551 is a general-purpose NPN amplifier transistor designed for amplification and switching applications. It features a high collector-emitter voltage rating and a TO-92 package.

✓ Total Stock: 383 pcs

$ Price Range: $0.77

2N5551 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Partservice ✓ Non-Authorised Inventory information	383 pcs On Request	383 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2N5551 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	NXP Semiconductors

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2N5551 Description

Short technical summary and product information.

The 2N5551 is a versatile NPN bipolar junction transistor (BJT) suitable for general-purpose amplification and switching tasks. It is designed for circuits operating below 160V, with a maximum collector-emitter voltage of 160V and a collector-base voltage of 180V.

Key electrical characteristics include a maximum collector current of 600mA and a maximum collector power dissipation of 625mW. The DC current gain (hfe) ranges from 80 to 250, with a typical value of 80 at 10mA. Its transition frequency is 100MHz, indicating good high-frequency performance for low-level signal amplification.

This transistor is housed in a standard TO-92 package, making it suitable for through-hole mounting. The operating and storage junction temperature range is from -55°C to +150°C.

Common applications include audio amplification and general switching circuits where its voltage and current handling capabilities are beneficial.

2N5551 Quick Information

Product Type: Bipolar Junction Transistor (BJT)

Canonical Name: 2N5551 NPN Amplifier Transistor

Subcategory: Single, Pre-Biased

2N5551 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2N5551 Estimated Pricing

Qty	Low	High
1+	$0.77	$0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5551 Features

NPN amplifier transistor for general use.
Maximum collector-emitter voltage is 160V.
Maximum collector current is 600mA.
DC current gain (hfe) ranges from 80 to 250.
Packaged in a TO-92 through-hole package.

2N5551 Applications

Used for signal amplification.
Suitable for general switching applications.
Ideal for low-level audio amplification.
Designed for circuits under 160 volts.

2N5551 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage for the 2N5551 transistor?

The maximum collector-emitter voltage for the 2N5551 is 160V.

What is the maximum collector current of the 2N5551 transistor?

The maximum collector current for the 2N5551 is 600mA.

What is the DC current gain (hfe) range for the 2N5551 transistor?

The DC current gain (hfe) for the 2N5551 ranges from 80 to 250.

What package type is the 2N5551 transistor supplied in?

The 2N5551 transistor is supplied in a TO-92 package.

What is the operating temperature range for the 2N5551 transistor?

The operating junction temperature range for the 2N5551 is -55°C to +150°C.