| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
790 pcs
|
790 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5550TFR is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 140V, a maximum collector current (Ic) of 600mA, and a maximum power dissipation (Pd) of 625mW. The transistor offers a minimum DC current gain (hFE) of 60 at Ic=10mA and Vce=5V, with a typical transition frequency (ft) of 300MHz. The maximum collector-emitter saturation voltage (Vce(sat)) is 250mV at Ib=5mA and Ic=50mA.
The device is housed in a through-hole TO-92-3 package (TO-226-3, TO-92-3 (TO-226AA) formed leads), suitable for manual assembly and prototyping. The operating junction temperature range extends up to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.30 | $0.30 |
| 10+ | $0.18 | $0.18 |
| 100+ | $0.11 | $0.11 |
| 500+ | $0.08 | $0.08 |
| 1,000+ | $0.07 | $0.07 |
| 2,000+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) is 140V.
The maximum collector current (Ic) is 600mA.
The maximum power dissipation (Pd) is 625mW.
The 2N5550TFR is available in a through-hole TO-92-3 package (TO-226-3, TO-92-3 (TO-226AA) formed leads).
The maximum operating junction temperature (TJ) is 150°C.
The part is listed as RoHS3 compliant, but this information is unverified.
The minimum DC current gain (hFE) is 60 at Ic=10mA and Vce=5V.