| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
130,336 pcs
|
130336 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5550TAR is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical specifications include a collector-emitter voltage (VCEO) of 140V, a continuous collector current of 600mA, and a power dissipation of 625mW. The device offers a minimum DC current gain (hFE) of 60 at 10mA collector current and 5V VCE, with a maximum VCE saturation voltage of 250mV at 50mA collector current. The transition frequency is 300MHz, making it suitable for low-frequency to medium-frequency circuits.
The transistor is housed in a TO-226-3 (TO-92-3) package with formed leads, designed for through-hole mounting. The junction operating temperature is rated up to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.34 | $0.34 |
| 10+ | $0.21 | $0.21 |
| 100+ | $0.13 | $0.13 |
| 500+ | $0.10 | $0.10 |
| 1,000+ | $0.09 | $0.09 |
| 2,000+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 140V.
The maximum continuous collector current is 600mA.
It comes in a TO-226-3 (TO-92-3) through-hole package.
The maximum junction temperature is 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified.