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2N5550TA The 2N5550TA is an NPN bipolar junction transistor from On Semiconductor. It features a 140V collector-emitter voltage, 600mA collector current, and 625mW power dissipation in a TO-92-3 package.
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2N5550TA

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2N5550TA is an NPN bipolar junction transistor from On Semiconductor. It features a 140V collector-emitter voltage, 600mA collector current, and 625mW power dissipation in a TO-92-3 package.
✓ Total Stock: 64,000 pcs
$ Price Range: $0.06 - $0.30

2N5550TA Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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64,000 pcs
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2N5550TA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2N5550TA Description

Short technical summary and product information.

The 2N5550TA is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications in through-hole assemblies.

 

Key electrical specifications include a maximum collector-emitter voltage of 140V, a maximum collector current of 600mA, and a maximum power dissipation of 625mW. The transistor offers a typical transition frequency of 300MHz and a minimum DC current gain of 60 at 10mA collector current and 5V collector-emitter voltage. The maximum collector-emitter saturation voltage is 250mV at a base current of 5mA and collector current of 50mA.

 

The device is housed in a TO-92-3 package with through-hole mounting, suitable for manual or automated insertion on printed circuit boards. The maximum junction operating temperature is 150°C.

 

This transistor is suitable for a variety of low-power switching and signal amplification circuits where its voltage and current ratings are appropriate.

2N5550TA Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N5550TA NPN Bipolar Transistor
Subcategory: Single NPN

2N5550TA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N5550TA Estimated Pricing

Qty Low High
1+ $0.30 $0.30
10+ $0.18 $0.18
100+ $0.11 $0.11
500+ $0.08 $0.08
1,000+ $0.07 $0.07
2,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5550TA Features

  • NPN bipolar junction transistor.
  • 140V maximum collector-emitter voltage.
  • 600mA maximum collector current.
  • 625mW maximum power dissipation.
  • TO-92-3 through-hole package.

2N5550TA Applications

  • General purpose low-power switching circuits.
  • Signal amplification in audio circuits.
  • Driver stages in control systems.
  • Suitable for through-hole PCB assembly.

2N5550TA FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N5550TA?

The maximum collector-emitter voltage (Vce) is 140V.

What is the maximum collector current of the 2N5550TA?

The maximum collector current (Ic) is 600mA.

What is the power dissipation rating of the 2N5550TA?

The maximum power dissipation is 625mW.

What is the package type of the 2N5550TA?

The 2N5550TA is available in a TO-92-3 through-hole package.

What is the operating temperature range of the 2N5550TA?

The maximum junction operating temperature is 150°C.

Is the 2N5550TA RoHS compliant?

The RoHS status is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.

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