| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5550 is a general-purpose NPN transistor offered in a bare die format by Thomson-CSF. This component is suitable for high voltage amplifier or switch applications. It serves as a complement to the PNP 2N5400.
Key electrical characteristics include a high collector-emitter breakdown voltage (VCEO) of 140V and a collector current (IC) capability of 600mA. The device also features a typical transition frequency (fT) of 100MHz at 10V and -10mA.
Mechanical specifications for the bare die include dimensions of 440 x 440 µm, with base and emitter pads measuring 100 x 100 µm. The die thickness is 230 (±20) µm. The top metal composition is Al - 1.3µm, and the back metal composition is AuAs - 0.9µm.
This transistor is characterized at temperature extremes and is available with high reliability gold back metal, making it suitable for demanding applications. Ordering information includes options for MIL-STD-750 visual inspection and MIL-PRF-38534 Class H or K Lot Acceptance Testing (LAT).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N5550 is 140 V.
The maximum continuous collector current (IC) for the 2N5550 is 600 mA.
The typical transition frequency (fT) of the 2N5550 is 100 MHz at 10V and -10mA.
The die size of the 2N5550 is 440 x 440 µm, excluding the saw street.
The RoHS status of the 2N5550 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N5550 is 1 Unlimited.
