| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
155 pcs
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155 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| SVHC Present | |
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The 2N5550 is an NPN bipolar junction transistor designed for general purpose applications. It offers a high collector-emitter voltage of 140V and a collector-base voltage of 160V, making it suitable for high voltage switching and amplification circuits.
Key electrical characteristics include a maximum collector current of 0.6A and a collector power dissipation of 0.31W. The transistor operates with an emitter-base voltage of up to 6V and has a transition frequency of 100MHz.
This component is typically used in applications requiring high voltage handling, such as in telecommunication equipment. Its through-hole mounting type makes it suitable for breadboarding and through-hole PCB assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) is 140V.
The maximum collector current (Ic) is 0.6A.
The typical transition frequency (fT) is 100MHz.
The maximum collector power dissipation (Pc) is 0.31W.
The maximum emitter-base voltage (Veb) is 6V.
The maximum collector-base voltage (Vcb) is 160V.
