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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
601 pcs
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601 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Voltage (VCEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5550 is an NPN silicon bipolar junction transistor designed for general purpose amplifier and switching applications. It is manufactured by On Semiconductor and is part of the 2N5550/2N5551 series of preferred devices.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 140V, a continuous collector current rating of 600mA, and a minimum DC current gain (hFE) of 60 at Ic=10mA, Vce=5V. The transistor features a typical transition frequency of 300MHz and a collector-emitter saturation voltage of 250mV at Ib=5mA, Ic=50mA.
The device is housed in a through-hole TO-92 package (TO-226-3, TO-92-3 Long Body) and supports a total power dissipation of 625mW at 25°C ambient temperature. The operating junction temperature range is -55°C to +150°C, making it suitable for a wide range of environments.
Design engineers should consider the thermal derating of 5.0mW/°C above 25°C and ensure adequate heat sinking for continuous operation near maximum ratings. The low saturation voltage and high transition frequency enable efficient switching and amplification in low-to-medium power circuits.
140V.
TO-226-3, TO-92-3 Long Body; supplier device package TO-92 (TO-226). Through-hole mounting.
-55°C to 150°C (junction temperature).
Minimum 60 at Ic=10mA, Vce=5V.
300MHz typical.