| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Current Rating (Amps) | |
| Gain | |
| Mounting Type | |
| Noise Figure | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The 2N5485 is an N-Channel JFET designed for RF applications. It features a drain-source voltage (Vds) of 15V, a continuous drain current (Id) of 10mA, and a drain current Idss of 4mA. The device provides a gain of 20dB with a noise figure of 2.5dB, making it suitable for low-noise RF amplifier stages.
This JFET is housed in a TO-226-3 / TO-92-3 (TO-226AA) through-hole package, with a supplier device package of TO-92-3. The through-hole mounting type allows for easy integration into prototype boards and traditional PCB designs.
Typical applications include RF front-end amplifiers, oscillator circuits, and other high-frequency signal processing where low noise and moderate gain are required. The N-Channel configuration and JFET technology offer high input impedance and low distortion.
The drain-source voltage (Vds) is 15V.
The continuous drain current (Id) is 10mA.
The gain is 20dB.
The noise figure is 2.5dB.
The 2N5485 is available in a TO-226-3 / TO-92-3 (TO-226AA) through-hole package, with a supplier device package of TO-92-3.
The RoHS status is listed as RoHS3 Compliant, but this is unverified.