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2N5461 The 2N5461 is a P-Channel depletion JFET from On Semiconductor. It features a 40V drain-gate voltage, 350mW power dissipation, and is housed in a TO-92 package.
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2N5461

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2N5461 is a P-Channel depletion JFET from On Semiconductor. It features a 40V drain-gate voltage, 350mW power dissipation, and is housed in a TO-92 package.
✓ Total Stock: 3,500 pcs
$ Price Range: $0.12

2N5461 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,500 pcs
On Request
3500 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2N5461 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Voltage
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2N5461 Description

Short technical summary and product information.

The 2N5461 is a P-Channel depletion-mode JFET designed for amplifier and switching applications. It is rated for a maximum drain-gate voltage of 40V and a maximum forward gate current of 10mA. The device offers a zero-gate-voltage drain current (IDSS) range of -2.0 to -9.0 mA and a forward transfer admittance (|yfs|) of 1500 to 5000 µmho, making it suitable for low-level analog signal processing.

 

This JFET has a maximum power dissipation of 350mW at 25°C ambient temperature and can operate over a junction temperature range of -65°C to +135°C. It features low input capacitance (Ciss) of 5.0 to 7.0 pF and reverse transfer capacitance (Crss) of 1.0 to 2.0 pF, which supports stable high-frequency performance.

 

The 2N5461 is supplied in a through-hole TO-92 (TO-226) package, which is widely used for general-purpose discrete semiconductors. The package is compatible with standard PCB layouts and manual or wave soldering processes.

2N5461 Quick Information

Product Type: JFET
Canonical Name: 2N5461 P-Channel JFET
Subcategory: P-Channel JFET

2N5461 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N5461 Estimated Pricing

Qty Low High
5,000+ $0.12 $0.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N5461 Features

  • P-Channel depletion JFET for amplifier circuits.
  • Maximum drain-gate voltage rating of 40V.
  • 350mW power dissipation at 25°C ambient.
  • Low input capacitance of 5.0 to 7.0 pF.
  • Through-hole TO-92 package for easy assembly.

2N5461 Applications

  • Used in low-noise analog signal amplifiers.
  • Suitable for switching and chopper circuits.
  • Ideal for general-purpose JFET applications.

2N5461 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-gate voltage for the 2N5461?

The maximum drain-gate voltage (VDG) is 40V.

What is the power dissipation of the 2N5461?

The maximum power dissipation is 350mW at 25°C ambient temperature.

What package is the 2N5461 available in?

The 2N5461 is available in a through-hole TO-226-3, TO-92-3 Long Body package (supplier device package TO-92).

What is the operating temperature range for the 2N5461?

The junction temperature range is -65°C to +135°C.

Is the 2N5461 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified.

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