| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,500 pcs
|
6500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Voltage |
The 2N5459 is an N-Channel JFET produced by On Semiconductor, designed for low-level audio amplification and analog switching applications. It is sourced from Process 55 and offers a maximum drain-gate voltage of 25V and a gate-source voltage rating of -25V. The zero-gate voltage drain current (IDSS) ranges from 4.0 mA to 16.0 mA, with a typical value of 9.0 mA. The device provides a forward transfer admittance (gfs) between 2000 and 6000 µmhos and an output conductance (gos) of 10 to 50 µmhos. Input capacitance (Ciss) is typically 4.5 to 7.0 pF, and reverse transfer capacitance (Crss) is 1.5 to 3.0 pF. The noise figure is 3.0 dB at 1 kHz. Power dissipation is rated at 625 mW, and the operating junction temperature range is -55°C to 150°C. The 2N5459 is available in a through-hole TO-92-3 package, making it suitable for prototyping and general-purpose circuit designs. The device is marked as RoHS3 Compliant and has an MSL of 1 (unlimited).
The maximum drain-gate voltage is 25V.
The operating junction temperature range is -55°C to 150°C.
The 2N5459 is available in the TO-92-3 (through-hole) package.
According to available data, it is marked RoHS3 Compliant, but this is unverified.
The zero-gate voltage drain current (IDSS) ranges from 4.0 mA to 16.0 mA, with a typical value of 9.0 mA.
The typical noise figure is 3.0 dB at 1 kHz.
The maximum power dissipation is 625 mW.