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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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95,500 pcs
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95500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5457 is an N-channel Junction Field Effect Transistor (JFET) manufactured by On Semiconductor. This device is designed for general-purpose amplification and switching applications, offering low noise and high gain characteristics.
Key electrical specifications include a Gate to Source Cutoff Voltage ranging from -0.5V to -6.0V (VDS = 15Vdc, ID = 10nAdc) and a Zero Gate Voltage Drain Current between 1.0A and 5.0A (VDS = 15Vdc, VGS = 0). The transistor has a maximum power dissipation of 310mW.
JFETs like the 2N5457 are voltage-controlled devices. The 2N5457 can function as a switch when operating in the ohmic region, where it conducts current when VDS is positive and less than the pinch-off voltage. Its TO-92 package is suitable for through-hole mounting.
This transistor is a versatile component for various electronic designs requiring amplification or switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Gate to Source Cutoff Voltage for the 2N5457 is between -0.5V and -6.0V under the condition of VDS = 15Vdc and ID = 10nAdc.
The Zero Gate Voltage Drain Current for the 2N5457 is between 1.0A and 5.0A when VDS = 15Vdc and VGS = 0.
The maximum power dissipation for the 2N5457 is 310mW.
The 2N5457 is available in a TO-92 package.