2N5457

The 2N5457 is a silicon N-Channel JFET from Central Semiconductor Corp, designed for switching and amplifier applications. It features a maximum drain-source voltage of 25V, a continuous gate current of 10 mA, and a power dissipation of 310 mW. The drain-source saturation current (IDSS) ranges from 1.0 to 5.0 mA, and the gate-source cutoff voltage (VGS(OFF)) is between 0.5 and 6.0V. The device has low input capacitance of 7 pF and reverse transfer capacitance of 3.0 pF, making it suitable for high-frequency applications.

This JFET is housed in a TO-92-3 through-hole package, which is easy to handle and solder. The operating junction temperature range is -65°C to +150°C, allowing use in harsh environments. The part is RoHS compliant according to some sources, but this is unverified. It is ideal for analog switching, amplifier stages, and signal processing circuits where low noise and high input impedance are required.

The device is available in bulk packaging and is a standard through-hole component. It is a direct replacement for many industry-standard 2N5457 parts. For design engineers, the forward transconductance (gfs) ranges from 1.0 to 5.0 mS, providing good gain characteristics. The output conductance is typically 50 μS. Overall, the 2N5457 is a versatile N-Channel JFET for general-purpose and low-frequency applications.