| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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109 pcs
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109 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5433 is an N-Channel Silicon Junction Field-Effect Transistor (JFET) manufactured by SIL. It is designed for high-performance analog switching and amplifier applications.
Key electrical specifications include a Gate-Source Cutoff Voltage (VGS(off)) ranging from -3V to -9V, a maximum Drain-Source On-Resistance (RDS(on)) of 7Ω, and a typical switching time (tON) of 2.5ns. The device also exhibits a low off-state current (ID(off)) of 10pA and a Gate-Source Breakdown Voltage (V(BR)GSS) of -25V.
This JFET is housed in a hermetically-sealed TO-206AC (TO-52) package, suitable for through-hole mounting. Its operating temperature range is from -55°C to 150°C, with a maximum power dissipation of 300mW.
The 2N5433 is suitable for applications requiring fast switching, low on-resistance, and high off-isolation, such as analog switches, choppers, and sample-and-hold circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Gate-Source Cutoff Voltage (VGS(off)) for the 2N5433 ranges from -3V to -9V.
The typical switching time (tON) for the 2N5433 is 2.5ns.
The maximum power dissipation for the 2N5433 is 300mW.
The 2N5433 operates within a temperature range of -55°C to 150°C.
The 2N5433 is supplied in a TO-206AC (TO-52) package.