| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Military Grade | |
| Operating Temperature Range | |
| Power Dissipation | |
| SVHC Present |
The 2N5416SJANTX is a PNP bipolar junction transistor designed for low power applications. It offers a maximum collector-emitter voltage of 300V and a continuous collector current of 1A.
This transistor has a minimum DC current gain of 30 and a power dissipation rating of 0.75W. It operates within a wide temperature range of -65°C to 200°C, classified for military applications.
The component is packaged in a TO-39 case and utilizes through-hole mounting. Its specifications make it suitable for various electronic circuits requiring a reliable PNP transistor.
Key electrical parameters include a collector-base voltage of 350V and an emitter-base voltage of 6V. The transistor is not radiation-hardened.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N5416SJANTX uses a TO-39 through-hole package.
It operates from -65°C to 200°C.
The maximum collector-emitter voltage is 300 V.
The DC collector current is rated at 1 A.
The maximum power dissipation is 0.75 W.
It is a PNP transistor.
The minimum DC current gain is 30.