| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N5416S is a PNP bipolar junction transistor manufactured by Microchip Technology. It is designed for through-hole mounting in a TO-205AD (TO-39-3) metal can package, also known as the TO-39 (TO-205AD) supplier device package.
This transistor offers a maximum collector-emitter voltage (VCEO) of 300V and a maximum collector current (IC) of 50µA. It can dissipate up to 750mW of power. The DC current gain (hFE) is a minimum of 30 when tested at a collector current of 50mA and a collector-emitter voltage of 10V. The maximum collector-emitter saturation voltage (Vce(sat)) is 2V at a base current of 5mA and a collector current of 50mA.
The device is rated for operation over a junction temperature range of -65°C to 200°C. It is packaged in a TO-39 metal can, which provides robust mechanical protection and good thermal performance for demanding applications.
| Qty | Low | High |
|---|---|---|
| 100+ | $31.82 | $31.82 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 300V.
The maximum collector current (IC) is 50µA.
The package is TO-205AD, TO-39-3 Metal Can, also known as the TO-39 (TO-205AD) supplier device package.
The operating junction temperature range is -65°C to 200°C.
The minimum DC current gain (hFE) is 30 at Ic=50mA and Vce=10V.
The mounting type is Through Hole.
The maximum power dissipation (Pd) is 750mW.