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14 pcs
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14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5416 is a PNP bipolar junction transistor (BJT) designed for various electronic applications. It is manufactured by Solid State Devices Inc (SSDI) and housed in a TO-39 metal can package.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 300 V and a maximum collector current of 1 A. The transistor offers a maximum power dissipation of 1 W and a transition frequency of 15 MHz. It has a minimum DC current gain (hFE) of 30 at 50mA collector current and 10V collector-emitter voltage.
This through-hole component is suitable for applications requiring a robust PNP transistor with specific voltage and current handling capabilities. The TO-39 package facilitates easy mounting on printed circuit boards.
While the original STMicroelectronics 2N5416 is classified as obsolete, functionally equivalent alternatives are available. For instance, the Microchip Technology 2N5416 maintains critical electrical parameters but has a lower power rating of 750 mW.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
300 V.
TO-39.
-65°C to 200°C.
1 A.
1 W.
15 MHz.
30 at 50 mA, 10 V.