2N5416

The 2N5416 is a PNP bipolar junction transistor (BJT) manufactured by Philips. This through-hole component is housed in a TO-39 metal can package. It is rated for a 300 V collector-emitter breakdown voltage and a 1 A maximum collector current. The transistor delivers 1 W maximum power dissipation and has a transition frequency of 15 MHz. The DC current gain (hFE) is a minimum of 30 at 50mA and 10V.

This part is classified as obsolete, necessitating the identification of functionally equivalent alternatives for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and power ratings while accommodating packaging and compliance requirements. The Microchip Technology 2N5416 is identified as a primary substitute, maintaining critical electrical parameters including 300 V breakdown voltage, 1 A collector current, and 30 minimum hFE, though its power rating is 750 mW.