| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vce Saturation (Max) |
The 2N5416 is a PNP bipolar junction transistor (BJT) manufactured by GE. This component is designed for applications requiring a 300 V collector-emitter breakdown voltage and a maximum collector current of 1 A. It has a maximum power dissipation of 1 W and a transition frequency of 15 MHz.
The 2N5416 is housed in a through-hole TO-5AA metal can package. It requires a minimum DC current gain (hFE) of 30 at a collector current of 50mA and a collector-emitter voltage of 10V. The saturation voltage (Vce) is a maximum of 2V at 5mA base current and 50mA collector current. The cutoff current (Ic) is a maximum of 1mA.
This transistor operates within a temperature range of -65°C to 200°C. The 2N5416 is classified as obsolete, making functionally equivalent alternatives necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and power ratings while accommodating packaging and compliance requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 300V.
The maximum continuous collector current is 1A.
The package is a TO-5AA through-hole metal can.
The operating junction temperature range is -65°C to 200°C.
The transition frequency is 15MHz.
The minimum DC current gain (hFE) is 30 at 50mA collector current and 10V Vce.
The maximum power dissipation is 1W.