2N5416

The 2N5416 is a PNP silicon low-power transistor designed for general purpose and high-frequency switching applications. It features a maximum collector-emitter breakdown voltage of 300V, a continuous collector current rating of 1A, and a maximum power dissipation of 1W. The device offers a transition frequency of 15MHz and a minimum DC current gain (hFE) of 30 at 50mA collector current and 10V Vce. The collector-emitter saturation voltage is typically 2.5V at 5mA base current and 50mA collector current.

This transistor is supplied in a through-hole TO-39 metal can package (also referenced as TO-205AD) and is compatible with standard TO-39 footprints. The datasheet indicates that the 2N5416 family is offered with military qualification levels (JAN, JANTX, JANTXV, JANS) per MIL-PRF-19500/485, making it suitable for high-reliability applications. The part is also available in surface mount variants (U4 and UA packages) and short-leaded TO-39 versions.

RoHS compliance is claimed in the datasheet, though this has not been independently verified. The device is intended for low-power circuits where high-voltage capability and moderate switching speed are required. Typical applications include general purpose switching, driver stages, and inverter circuits.